Co-authors (105)

Conferences (5)

Journals (22)

Keywords (155)

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Academic

Yu-Long Jiang

Yu-Long Jiang,Fudan University,Electrical & Electronic Engineering,Nanotechnology,Material Science

Yu-Long Jiang

Fudan University

Publications: 80 | Citations: 41

Fields: Electrical & Electronic Engineering, Nanotechnology, Material Science

Collaborated with 105 co-authors from 2001 to 2012 | Cited by 161 authors

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Publications (80)

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Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

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Journal: Semiconductor Science and Technology - SEMICOND SCI TECHNOL , vol. 27, no. 7, 2012

Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer thin films

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Journal: Journal of Applied Physics - J APPL PHYS , vol. 110, 2011

Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics

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Conference: Interconnect Technology, IEEE International Conference - IITC , pp. 1-3, 2011

High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 12, pp. 1656-1658, 2011

Annealing induced hysteresis suppression for TiN/HfO2/GeON/pGe capacitor

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Journal: Semiconductor Science and Technology - SEMICOND SCI TECHNOL , vol. 26, no. 12, 2011

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Citations (41 times by 37 publications)

Temperature-Dependent Modeling and Characterization of Through-Silicon Via Capacitance (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 4, pp. 563-565, 2011

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

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Conference: Solid-State Device Research European Conference - ESSDERC , pp. 231-234, 2011

Technology Assessment of Through-Silicon Via by Using $C$–$V$ and $C$–$t$ Measurements

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 7, pp. 946-948, 2011

Phase transformation of Ni/Si thin films induced by nanoindentation and annealing

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Journal: Applied Physics A-materials Science & Processing - APPL PHYS A-MAT SCI PROCESS , vol. 100, no. 4, pp. 1089-1096, 2010

Ultrathin (AlCrTaTiZr)N[sub x]/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects

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Journal: Journal of The Electrochemical Society - J ELECTROCHEM SOC , vol. 157, no. 6, 2010

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